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SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in pc, portable equipment and battery powered systems.
KMB7D0N40QA
N-Ch Trench MOSFET
H T D P G L
FEATURES
VDSS=40V, ID=7A. Drain-Source ON Resistance. RDS(ON)=25m RDS(ON)=45m (Max.) @VGS=10V (Max.) @VGS=4.5V
1 8
A
5 B1 B2 4
Super High Dense Cell Design High Power and Current Handing Capability
DIM A B1 B2 D G H L P T
MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05
Maximum Ratings (Ta=25
CHARACTERISTIC Drain Source Voltage Gate Source Voltage
Unless otherwise noted)
SYMBOL VDSS VGSS DC ID * IDP IS PD * Tj Tstg RthJA* PATING 40 25 7 22 1.7 2 1.44 -55~150 -55~150 62.5 /W UNIT V V A A A W W
FLP-8
Drain Current Pulsed Drain Source Diode Forward Current Drain Power Dissipation TA=25 TA=100 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note) *Surface Mounted on 1 1 FR4 Board.
KMB7D0N 40QA
PIN CONNECTION (TOP VIEW)
S S S G
1
8
D D D D
1 2 3
8 7 6 5
2
7
3
6
4
4
5
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KMB7D0N40QA
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance On-State Drain Current Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delat Time Turn-On Rise Time Turn-On Deley Time Turn-On Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage Note) *Pulse Test : Pulse width 10 VSDF* , Duty cycle IDR=1.7A, VGS=0V 1% 0.78 1.2 V Ciss Coss Crss Qg* Qgs* Qgd* td(on)* tr* td(off)* tf* VDD=20V, VGS=10V ID=1A, RG=3.3 VDS=20V, VGS=10V, ID=6A VDS=20V, VGS=4.5V, ID=6A VDS=20V, VGS=4.5V, ID=6A VDS=25V, f=1MHz, VGS=OV 947 117 77 18.2 8.7 2.8 3.3 16.7 3.6 28.7 10.1 1231 152 100 24 12 nC 4 5 19 5 ns 38 14 pF BVDSS IDSS IGSS Vth RDS(ON)* ID(ON)* gfs* ID=250 A, VGS=0V VDS=32V, VGS=0V VGS= 25V, VDS=0V 40 1 15 1.8 20 35 8 1 100 2.5 25 45 m A S V A A V SYMBOL
) UNLESS OTHERWISE NOTED
TEST CONDITION MIN. TYP. MAX. UNIT
VDS=VGS, ID=250 A VGS=10.0V, ID=6A VGS=4.5V, ID=5A VDS=5V, VGS=10V VDS=5V, ID=6A
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Revision No : 0
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KMB7D0N40QA
Fig1. ID - VDS
Drain Source On Resistance RDS(ON) ()
20
VGS=10,5,4.5V Common Source TA=25 C Pulse Test
Fig2. RDS(on) - ID
0.2 0.16 0.12 0.08
4.5V Common Source TA=25 C Pulse Test
Drain Current ID (A)
16 12 8
4.0V
3.5V
4
VGS=3.0V
0.04
VGS=10.0V
0 0 2 4 6 8 10
0 0 4 8 12 16 20
Drain - Source Voltage VDS (V)
Drain - Current ID (A)
Fig3. ID - VGS
24
Common Source VDS=10V Pulse Test
Fig4. RDS(on) - Tj
200
Common Source VDS=10V Pulse Test
Drain Current ID (A)
20 16 12 8 4 0
Normalized Drain Source On Resistance RDS(ON) (m)
160 120 80 40 0
25 C
Tc=-55 C 125 C
ID=6A
1
2
3
4
5
-80
-40
0
40
80
120
160
Gate-Source Volatage VGS (V)
Junction Temperature Tj ( C )
Fig5. Vth - Tj
Gate Threshold Voltage Vth (V) Reverse Drain Current IDR (A)
5 Common Source
VGS=VDS ID=250A 4 Pulse Test
Fig6. IDR - VSDF
10 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0
Common Source TA= 25 C Pulse Test
3 2 1 0 -80
-40
0
40
80
120
160
Junction Temperature Tj ( C)
Source - Drain Forward Voltage VSDF (V)
2008. 1. 25
Revision No : 0
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KMB7D0N40QA
Fig.7 Gate Charge Circuit and Wave Form
VGS 10 V
Schottky Diode
ID
0.5
VDSS ID 1.0 mA VDS VGS
Q Qgs Qgd Qg
Fig.8 Resistive Load Switching
RL
VDS
90%
0.5 VDSS 3.3 VDS 10 V
VGS
10% td(on) tr ton td(off)
VGS
tf toff
2008. 1. 25
Revision No : 0
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